METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

The purpose of the present invention is to provide a method to fabricate a semiconductor device capable of improving a performance of the semiconductor device by improving a width effect by controlling a channel shape of a fin field effect transistor (FinFET). The method to fabricate a semiconductor device comprises: a step of forming a first fin shape pattern including an upper part and a lower part on a substrate; a step of forming a second fin shape pattern by removing an upper part of the first fin shape pattern; a step of forming a dummy gate electrode crossing with the second fin shape pattern on the second fin shape pattern; and a step of forming a third fin shape pattern by removing an upper part of the second fin shape pattern after forming the dummy gate electrode. The upper width of the second fin shape pattern is lower than or equal to the upper width of the first fin shape pattern, and is larger than or equal to the upper width of the third fin shape pattern.