发明名称 |
Electrostatic chuck and semiconductor manufacturing device |
摘要 |
An electrostatic chuck includes a placing stage formed from a ceramic including aluminum oxide and yttrium oxide, and an electrostatic electrode arranged in the placing stage, wherein a content rate of the yttrium oxide is 0.5 wt % to 2.0 wt %. Preferably, the electrostatic chuck is used while being heated at a temperature of 100° C. to 200° C. |
申请公布号 |
US9418884(B2) |
申请公布日期 |
2016.08.16 |
申请号 |
US201414247603 |
申请日期 |
2014.04.08 |
申请人 |
SHINKO ELECTRIC INDUSTRIES CO., LTD. |
发明人 |
Miyazawa Masakuni;Miyamoto Kazuyoshi |
分类号 |
H01L21/683;H01L21/687 |
主分类号 |
H01L21/683 |
代理机构 |
Katz, Quintos & Hanson, LLP |
代理人 |
Katz, Quintos & Hanson, LLP |
主权项 |
1. An electrostatic chuck, comprising:
a placing stage formed from a ceramic including aluminum oxide and yttrium oxide; and an electrostatic electrode arranged in the placing stage, wherein a content rate of the aluminum oxide is 94.2 wt % to 96.1 wt %, and a content rate of the yttrium oxide is 0.5 wt % to 2.0 wt %. |
地址 |
Nagano-shi JP |