| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS switch circuit which has a step-up and down circuit excellent in accuracy and tolerant of manufacturing variations, and has sufficiently reduced on-resistance while securing withstand voltage.SOLUTION: The MOS switch circuit comprises: a booster circuit 110 to which a first switch control signal IN2 is inputted; an NMOS transistor 108 having a gate terminal Gn to which an output signal IN4 of the booster circuit is supplied; a step-down circuit 120 to which a second switch control signal IN1 is inputted; a PMOS transistor 107 having a gate terminal Gp to which an output signal IN3 of the step-down circuit is supplied; an output terminal 105 connected to a drain terminal Dn of the NMOS transistor and a drain terminal Dp of the PMOS transistor; a first capacitative element 209 connected between a ground terminal 102 and an output terminal 207 of the booster circuit; and a third capacitative element 314 connected between a power terminal 101 and an output terminal 307 of the step-down circuit.SELECTED DRAWING: Figure 1 |
