SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device with a structure that can reduce the parasitic capacitance between wires sufficiently.SOLUTION: In a thin film transistor with a bottom-gate structure, an oxide insulating layer to serve as a channel protective layer is formed for a part of an oxide semiconductor layer overlapping with a gate electrode layer, and an oxide insulating layer is formed covering a peripheral part (including a side surface) of the oxide semiconductor layer when the oxide insulating layer is formed. The oxide insulating layer that covers the peripheral part (including a side surface) of the oxide semiconductor layer reduces the parasitic capacitance by increasing the distance between the gate electrode layer and wire layers (source wire layer, capacitance wire layer, and the like) formed above or around the gate electrode layer. Since the oxide insulating layer covering the peripheral part of the oxide semiconductor layer is formed in the same process as the channel protective layer, the parasitic capacitance can be reduced without increasing the number of steps.SELECTED DRAWING: Figure 1