| 发明名称 | Method of cutting metal gate | ||
| 摘要 | A method for fabricating a semiconductor device includes forming a first fin and a second fin on a substrate. The first fin has a first gate region and the second fin has a second gate region. The method also includes forming a metal-gate line over the first and second gate regions. The metal-gate line extends from the first fin to the second fin. The method also includes applying a line-cut to separate the metal-gate line into a first sub-metal gate line and a second sub-metal gate line and forming an isolation region within the line cut. | ||
| 申请公布号 | US9520482(B1) | 申请公布日期 | 2016.12.13 |
| 申请号 | US201514940841 | 申请日期 | 2015.11.13 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Chang Po-Chin;Wang Chih-Hao;Yang Kai-Chieh;Hung Shih-Ting;Wu Wei-Hao;Wu Gloria;Fu Inez;Su Chia-Wei;Hsiao Yi-Hsuan |
| 分类号 | H01L21/8238;H01L29/66;H01L27/092 | 主分类号 | H01L21/8238 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A method comprising: forming a first fin and a second fin on a substrate, the first fin having a first gate region and the second fin having a second gate region; forming a metal-gate line over the first and second gate regions, wherein the metal-gate line extends from the first fin to the second fin; applying a line-cut to separate the metal-gate line into a first sub-metal gate line and a second sub-metal gate line; and forming an isolation region within the line cut. | ||
| 地址 | Hsin-Chu TW | ||