| 发明名称 | Semiconductor device and method for fabricating the same | ||
| 摘要 | A semiconductor device and a method for fabricating the same are provided. The semiconductor device comprising a substrate including a first surface and a second surface that face each other, a planarization layer formed on the first surface of the substrate, a passivation layer formed on the planarization layer, and a through via contact penetrating the substrate, the planarization layer, and the passivation layer, and being exposed from the passivation layer. | ||
| 申请公布号 | US9524921(B2) | 申请公布日期 | 2016.12.20 |
| 申请号 | US201414146741 | 申请日期 | 2014.01.03 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Kim Tae-Seong |
| 分类号 | H01L23/48;H01L23/52;H01L29/40;H01L21/768 | 主分类号 | H01L23/48 |
| 代理机构 | Myers Bigel, P.A. | 代理人 | Myers Bigel, P.A. |
| 主权项 | 1. A semiconductor device comprising: a substrate including a first surface and a second surface that are opposite each other; a planarization layer on the first surface of the substrate; a passivation layer on the planarization layer; and a through via contact penetrating the substrate, the planarization layer, and the passivation layer, an end of the through via contact being exposed through an opening in the passivation layer, wherein the planarization layer includes low viscosity resin, wherein the passivation layer includes at least one of silicon oxide and silicon nitride, and wherein a viscosity of the planarization layer is 100 to 1000 centipoises (CPS). | ||
| 地址 | KR | ||