PROTECTED SENSOR FIELD EFFECT TRANSISTORS

摘要

Protected sensor field effect transistors (SFETs). The SFETs include a semiconductor substrate, a field effect transistor, and a sense electrode. The SFETs further include an analyte-receiving region that is supported by the semiconductor substrate, is in contact with the sense electrode, and is configured to receive an analyte fluid. The analyte-receiving region is at least partially enclosed. In some embodiments, the analyte-receiving region can be an enclosed analyte channel that extends between an analyte inlet and an analyte outlet. In these embodiments, the enclosed analyte channel extends such that the analyte inlet and the analyte outlet are spaced apart from the sense electrode. In some embodiments, the SFETs include a cover structure that at least partially encloses the analyte-receiving region and is formed from a cover material that is soluble within the analyte fluid. The methods include methods of manufacturing the SFETs.

主权项

1. A sensor field effect transistor (SFET), comprising:
a semiconductor substrate; a field effect transistor supported by the semiconductor substrate and comprising a source, a drain, and a gate; a sense electrode supported by the semiconductor substrate and in electrical communication with the gate; and an enclosed analyte channel that is supported by the semiconductor substrate, is configured to contain an analyte fluid and to permit fluid contact between the analyte fluid and the sense electrode, extends in contact with the sense electrode, and extends between an analyte inlet and an analyte outlet, wherein the analyte inlet and the analyte outlet are spaced apart from the sense electrode along a length of the enclosed analyte channel.