| 摘要 |
A monolithic semiconductor rectifier circuit structure incorporating two npn power transistors and two Schottky-barrier diodes is disclosed. The transistors are connected in an inverted mode and are the main rectifying elements. The Schottky-barrier diodes are connected between the emitters and collectors of the respective transistors and help to initiate rapid turn-on of the transistors. The Schottky-barrier diodes have a relatively low forward voltage drop and their reverse recovery currents are substantially zero. Thus, the Schottky diodes operate with minimum power loss. The monolithic circuit structure may be combined with a discrete current transformer unit to form a hybrid rectifying circuit.
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