Drain-extended MOS transistors with diode clamp and methods for making the same

摘要

High side extended-drain MOS driver transistors (T 2 ) are presented in which an extended drain ( 108, 156 ) is separated from a first buried layer ( 120 ) by a second buried layer ( 130 ), wherein an internal or external diode ( 148 ) is coupled between the first buried layer ( 120 ) and the extended drain ( 108, 156 ) to increase the breakdown voltage.