Vertical diode formation in SOI application

摘要

A method for making a semiconductor device is provided. The method comprises (a) providing a semiconductor stack comprising a semiconductor substrate ( 203 ), a first semiconductor layer ( 205 ), and a first dielectric layer ( 207 ) disposed between the substrate and the first semiconductor layer; (b) forming a first trench in the first dielectric layer which exposes a portion of the substrate; (c) forming a first doped region ( 209 ) in the exposed portion of the substrate; and (d) forming anode ( 211 ) and cathode ( 213 ) regions in the first implant region.