发明名称 Semiconductor device, its fabrication method and molding apparatus used therefor
摘要 In a resin mold semiconductor device in which a chip is mounted to a substrate and one of its main planes is molded by a resin member by pressure molding, and in a molding apparatus therefor, a gate of a mold is formed in such a manner as to extend towards a radial center of wires inside a cavity so that the resin injected under pressure from a gate of the molding apparatus into the cavity flows in a radial direction along the wires and air vents are opened at the remotest positions of the cavity from the gate. Accordingly, there can be obtained a semiconductor device in which a gate trace is positioned on the upper surface of the resin member and on a vertical line passing through the radial center of leads formed radially on the substrate.
申请公布号 US5200366(A) 申请公布日期 1993.04.06
申请号 US19910691850 申请日期 1991.04.26
申请人 HITACHI, LTD. 发明人 YAMADA, TOMIO;OKA, HIROI;NAKAMURA, ATSUSI;NISHI, KUNIHIKO;YAMAZAKI, KAZUO;KOIZUMI, KOUZI;SAEKI, JUNICHI
分类号 B29C45/14;H01L21/56;H01L23/31 主分类号 B29C45/14
代理机构 代理人
主权项
地址