发明名称 |
Semiconductor device, its fabrication method and molding apparatus used therefor |
摘要 |
In a resin mold semiconductor device in which a chip is mounted to a substrate and one of its main planes is molded by a resin member by pressure molding, and in a molding apparatus therefor, a gate of a mold is formed in such a manner as to extend towards a radial center of wires inside a cavity so that the resin injected under pressure from a gate of the molding apparatus into the cavity flows in a radial direction along the wires and air vents are opened at the remotest positions of the cavity from the gate. Accordingly, there can be obtained a semiconductor device in which a gate trace is positioned on the upper surface of the resin member and on a vertical line passing through the radial center of leads formed radially on the substrate.
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申请公布号 |
US5200366(A) |
申请公布日期 |
1993.04.06 |
申请号 |
US19910691850 |
申请日期 |
1991.04.26 |
申请人 |
HITACHI, LTD. |
发明人 |
YAMADA, TOMIO;OKA, HIROI;NAKAMURA, ATSUSI;NISHI, KUNIHIKO;YAMAZAKI, KAZUO;KOIZUMI, KOUZI;SAEKI, JUNICHI |
分类号 |
B29C45/14;H01L21/56;H01L23/31 |
主分类号 |
B29C45/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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