| 发明名称 |
Semiconductor laser device, and a method for producing a compound semiconductor device including the semiconductor laser device |
| 摘要 |
On a GaAs substrate (11) (AlYGa1-Y)0.5In0.5P crystal layers (14) (0</=Y</=1) is formed to be lattice-matched with the substrate (11). By radiating As molecular beams on the surface of the crystal layers (14) while heating the layered substrate (11) to a temperature at which In in the crystal layers (14) evaporates, the portion near the surface of the crystal layers (14) is changed into an AlYGa1-YAs crystal layer (15) (0</=Y</=1) of a thickness of several molecules, on which layer an AlXGa1-XAs crystal layer (16) (0</=X</=1) is formed. Since the surface of the AlYGa1-YAs crystal layer (15) has been purified, the formed AlXGa1-XAs crystal layer (16) has a high crystallinity, allowing production of a light emitting diode, a semiconductor laser device and the like with high efficiency.
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| 申请公布号 |
US5255279(A) |
申请公布日期 |
1993.10.19 |
| 申请号 |
US19910698001 |
申请日期 |
1991.05.09 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
TAKAHASHI, KOSEI;HOSODA, MASAHIRO;TSUNODA, ATSUO;SUYAMA, TAKAHIRO;MATSUI, SADAYOSHI |
| 分类号 |
H01L21/20;H01L21/205;H01L31/105;H01L31/18;H01L33/00;H01S5/042;H01S5/20;H01S5/223;H01S5/32;H01S5/323;(IPC1-7):H01S3/19 |
主分类号 |
H01L21/20 |
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