Semiconductor device having a buffer structure for eliminating defects from a semiconductor layer grown thereon.,申请号EP19890403641-传众专利搜索

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发明名称	Semiconductor device having a buffer structure for eliminating defects from a semiconductor layer grown thereon.
摘要
申请公布号	EP0375564(B1)	申请公布日期	1994.03.02
申请号	EP19890403641	申请日期	1989.12.22
申请人	FUJITSU LIMITED	发明人	INOUE, TOSHIKAZU
分类号	H01L29/201;H01L21/20;H01L21/205;H01L29/205;H01L29/80;H01S5/00;(IPC1-7):H01L29/205;H01L21/208	主分类号	H01L29/201
代理机构		代理人
主权项
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