| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device which can very quickly read out data while restraining the increase in its own area. <P>SOLUTION: The semiconductor storage device discharges a pre-charged bit line BIT0 by means of memory cells 100 and a reading auxiliary circuit 603 when data are read out from the memory cells 100. By this, the bit line BIT0 is very quickly discharged, and accordingly the data can very quickly be read out from the memory cells 100. The semiconductor storage device includes a P-type transistor TP5, which supplies a power source voltage VDD, in the reading auxiliary circuit 603. By this, the electric potential of the bit line BIT0 is prevented from dropping to "L" level due to noise or the like. Consequently, malfunction of the semiconductor storage device is prevented. <P>COPYRIGHT: (C)2007,JPO&INPIT |
