发明名称 POWER FEEDING STRUCTURE OF WAFER HOLDING DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To prevent the damaging of a ceramic base body caused by a thermal stress produced by the conduction of power to an electrostatic electrode, a heater electrode and a high-frequency electrode and the conducting failure of a via hole during feeding of power to the electrostatic electrode and/or heater electrode. SOLUTION: A power feeding structure is constructed in such a manner that an electrostatic electrode 3 and/or a high-frequency electrode is buried in a ceramic base board 2 composed of a plurality of ceramic layers, a fixing hole for attaching external terminals 7 and 8 is formed in the ceramic base board 2, a via hole 13 injecting conductive materials into the plurality of ceramic layers between the fixing hole and the electrode is formed and thereby power is conducted. In this case, a conductive layer wider in area than that of the fixing hole is provided in each ceramic layer between the fixing hole and the electrode and the via holes 13 of the respective ceramic layers are disposed in positions shifted from each other.</p>
申请公布号 JPH09213455(A) 申请公布日期 1997.08.15
申请号 JP19960019193 申请日期 1996.02.05
申请人 KYOCERA CORP 发明人 NAGASAKI KOICHI;KAWABE YASUNORI;MAEHARA TATSUYA;KUKIDA AKIHIRO
分类号 H05B3/08;H01L21/68;H01L21/683;H02N13/00;(IPC1-7):H05B3/08 主分类号 H05B3/08
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