发明名称 Digitaler Schaltkreis in MOS-Technologie
摘要 The digital circuit has a dielectric layer (5) applied to a semiconductor substrate (1), with a microwave stripline (2) for energy transmission provided via a metal stripline (3) applied to the surface of the dielectric layer and a trench region (4) in the semiconductor substrate beneath the metal stripline. The trench region has a given conductivity doping and acts as the earth contact for the microwave stripline.
申请公布号 DE19732177(C2) 申请公布日期 1999.06.10
申请号 DE1997132177 申请日期 1997.07.25
申请人 SIEMENS AG, 80333 MUENCHEN, DE 发明人 BUCK, MARTIN, 81249 MUENCHEN, DE
分类号 H01L21/3205;H01L21/822;H01L23/52;H01L23/66;H01L27/04;H01P1/15;H03K17/16;(IPC1-7):H01L23/52;H01L27/085;H01P3/08 主分类号 H01L21/3205
代理机构 代理人
主权项
地址