发明名称 |
Digitaler Schaltkreis in MOS-Technologie |
摘要 |
The digital circuit has a dielectric layer (5) applied to a semiconductor substrate (1), with a microwave stripline (2) for energy transmission provided via a metal stripline (3) applied to the surface of the dielectric layer and a trench region (4) in the semiconductor substrate beneath the metal stripline. The trench region has a given conductivity doping and acts as the earth contact for the microwave stripline. |
申请公布号 |
DE19732177(C2) |
申请公布日期 |
1999.06.10 |
申请号 |
DE1997132177 |
申请日期 |
1997.07.25 |
申请人 |
SIEMENS AG, 80333 MUENCHEN, DE |
发明人 |
BUCK, MARTIN, 81249 MUENCHEN, DE |
分类号 |
H01L21/3205;H01L21/822;H01L23/52;H01L23/66;H01L27/04;H01P1/15;H03K17/16;(IPC1-7):H01L23/52;H01L27/085;H01P3/08 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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