首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
Method of forming silicon oxide layer and method of manufacturing thin film transistor thereby
摘要
申请公布号
GB9925564(D0)
申请公布日期
1999.12.29
申请号
GB19990025564
申请日期
1999.10.28
申请人
LG. PHILIPS LCD CO LTD
发明人
分类号
H01L21/31;C23C16/40;C23C16/509;H01J37/32;H01L21/316;H01L21/336;H01L29/786
主分类号
H01L21/31
代理机构
代理人
主权项
地址
您可能感兴趣的专利
APPARATUS FOR ASSEMBLING ARMORING PLATES
AIR CLEANER
EXTRACTOR
APPARATUS FOR FRACTIONAL CONDENSATION
METHOD OF DETERMINING NONEQUIVALENCE OF CHEMICALLY IDENTICAL MEDICINES
METHOD OF TREATMENT OF BONE DEFFECTS
APPARATUS FOR FINE CLEANING OF LIQUID FROM MECHANICAL IMPURITIES
BAND FILTER PRESS
MASS-TRANSFER PLATE
APPARATUS FOR DISTRIBUTING FODDER
TRACK CONTROLLER FOR A DOCUMENT PROCESSOR
A SEMICONDUCTOR READ ONLY MEMORY DEVICE
ADIABATIC GAS REACTOR
TAKE-OFF SYSTEM FOR HANDLING LETTERS AND THE LIKE
LIFTING DEVICE FOR TRANSPORTING CONTAINERS
SPLICE CONNEXION FOR HOLLOW-CORE LIGHT-WAVE CABLES
SEMICONDUCTOR SWITCH
METHOD AND APPARATUS FOR INJECTING FLUID INTO FORMATION
AVERAGING DEVICE
HIGH FREQUENCY OSCILLATOR-INVERTER BALLAST CIRCUIT FOR DISCHARGE LAMPS