METHOD FOR FORMING GATE ELECTRODE

摘要

PURPOSE: A method for forming a gate electrode is provided to prevent the bad gate pattern on a photoresist process by improving the bad surface morphology of a polysilicon film. CONSTITUTION: An insulation film(110) and the polysilicon film are successively formed on a semiconductor substrate(100). The substrate having the insulation film and the polysilicon film is heat-treated in the hydrogen atmosphere. The gate electrode is formed by patterning the heat-treated insulation film and polysilicon film. The heat treatment is carried out under hydrogen atmosphere at 700-900 deg.C. A surface of the polysilicon film having the bad morphology is uniformed by the heat treatment. A photoresist film is formed on the polysilicon film(125) of good morphology. The gate pattern is formed by exposing and developing the photoresist. Because of the good surface morphology of the polysilicon film, the diffused reflection do not occur when exposing the photoresist film.