| 发明名称 |
METHOD FOR FABRICATING A SEMICONDUCTOR COMPONENT HAVING A T-SHAPED CONTACT ELECTRODE |
| 摘要 |
The invention relates to a method for producing a semiconductor component comprising a contact electrode with a T-shaped cross-section, in particular a field effect transistor with a T-gate. According to the invention, a spacer configured on the edge of the material allows a self-adjusting placement of the gate base and gate head.
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| 申请公布号 |
CA2433734(A1) |
申请公布日期 |
2002.08.15 |
| 申请号 |
CA20022433734 |
申请日期 |
2002.01.14 |
| 申请人 |
UNITED MONOLITHIC SEMICONDUCTORS GMBH |
发明人 |
BEHAMMER, DAG |
| 分类号 |
H01L29/423;H01L21/285;H01L21/335;H01L21/338;H01L29/41;H01L29/812;(IPC1-7):H01L21/335 |
主分类号 |
H01L29/423 |
| 代理机构 |
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