| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve reliability in a semiconductor device and its manufacturing method. <P>SOLUTION: A glass substrate 56 is adhered to the surface of a silicon wafer in which a pad electrode 53 is formed. Then, a via hole 81 reaching the pad electrode 53 from the rear of the silicon wafer is formed, and a groove that is extended along a dicing line center DS and penetrates the silicon wafer from the rear of the silicon wafer is formed. Then, a buffering layer 60, a wiring layer 63, a solder mask 65, and a solder ball 66 are formed on the rear of the silicon wafer by each kind of process including processes following heat treatment. Finally, the silicon wafer supported by the glass substrate 56 is divided into each silicon chip 51A by dicing. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
