METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method for processing a semiconductor substrate, which can inhibit the generation of minute defects and oxygen deposition which cause element characteristics to deteriorate. SOLUTION: In the method for processing the semiconductor substrate having a step of subjecting the semiconductor substrate, of which the surface is exposed, to a heat treatment under a gaseous atmosphere, in order to control so as to inhibit the deposition and the growth of oxygen in the semiconductor substrate by the heat treatment and the heat treatment steps before the heat treatment, a heat treatment step in an argon gas atmosphere before the heat treatment are performed under heat treating temperatures and heat treating time which are below certain limits. Thereafter, the heat treatment is performed under the argon gas atmosphere at temperatures not lower than 1,100°C. The internal minute defect concentration of the region, whose depth is 50μm deeper than that of the surface of the semiconductor substrate, is made to be 1×109particles/cm3or less, and the internal minute defect density of the region, whose depth is 10μm deeper than that of the surface, is made to be 1×107particles/cm3or less. COPYRIGHT: (C)2007,JPO&INPIT