METHODS FOR FORMING AN ISOLATION STRUCTURE IN A SILICON SUBSTRATE

摘要

A process for forming STI regions comprises performing an In Situ Steam Generation (ISSG) radical conversion on a SiN liner layer within an STI trench in order to expose the top corner of the trench and simultaneously cause rounding the top corner of a liner oxide layer within the trench. The rounding of the liner oxide layer can prevent thinning of a subsequently formed gate oxide.