发明名称 |
SEMICONDUCTOR DEVICES HAVING ELONGATED CONTACT PLUGS |
摘要 |
A method of manufacturing a semiconductor device includes forming conductive structures on a substrate. Each of the conductive structures has a line shape that extends along a first direction parallel to the substrate. Insulating spacers are formed on upper sidewalls of the conductive structures. An insulating interlayer is formed that covers the conductive structures. A portion of the insulating interlayer between the conductive structures is etched to form a contact hole. An upper portion of the contact hole is larger than a lower portion thereof. The upper portion of the contact hole has a first width along the first direction and a second width along a second direction parallel to the substrate and substantially perpendicular to the first direction. The first width is substantially larger than the second width. The contact hole is filled with a conductive material to form a contact plug.
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申请公布号 |
US2008088025(A1) |
申请公布日期 |
2008.04.17 |
申请号 |
US20070954349 |
申请日期 |
2007.12.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YUN CHEOL-JU;CHUNG TAE-YOUNG;LEE DONG-JUN |
分类号 |
H01L23/48;H01L27/108;H01L21/60;H01L21/768;H01L21/8242;H01L29/12 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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