发明名称 MEMORY DRIVING METHOD AND SEMICONDUCTOR STORAGE DEVICE
摘要 This disclosure concerns a method of driving a memory including memory cells, bit lines, and word lines, each memory cell having a source, a drain, and a floating body, the method comprising performing a refresh operation for recovering deterioration of first logical data of the memory cells and deterioration of second logical data of the memory cells, wherein in the refresh operation, the number of the carriers injected into the floating body is larger than the number of the carriers discharged from the floating body when a potential at the floating body is larger than a critical value, and the number of the carriers injected into the floating body is smaller than the number of the carriers discharged from the floating body when the potential at the floating body is smaller than the critical value.
申请公布号 US2008316849(A1) 申请公布日期 2008.12.25
申请号 US20080132338 申请日期 2008.06.03
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 OHSAWA TAKASHI
分类号 G11C7/00 主分类号 G11C7/00
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