| 摘要 |
<p>A method for removing a photoresist layer is provided to control parameters of a transistor without additional ion implantation by performing a strip process or a plasma ashing process using a thinner. A photoresist pattern is formed on a substrate(10). The substrate is partially exposed to the outside through the photoresist pattern. A well region is formed in the exposed substrate by performing an ion implantation using the photoresist pattern as an ion implantation mask. The photoresist pattern is removed from the resultant structure by using thinner or plasma. At this time, parameters of a transistor are changed by controlling electrons of a channel region of the transistor.</p> |
