| 摘要 |
A semiconductor device is configured such that an electrode pad connected to an internal circuit is formed on a surface of a semiconductor substrate, wires are formed near and around the electrode pad, a protective film is formed which covers the edge of the electrode pad, the wires, and the surface of the semiconductor substrate, and a metal bump is formed on the electrode pad such that the edge of the electrode is disposed on the protective film on the wires. According to this configuration, since the wires are formed near the electrode pad, the protective film covering the edge of the electrode pad and an area around the edge is formed relatively flat, and the metal bump has a flat surface on a convex portion formed on the relatively flat protective film. Therefore, even when the electrode pad is small, a flat area can be sufficiently obtained on the surface of the metal bump, thereby obtaining stable connection via an anisotropic conductive sheet or the like by COG. |
