发明名称 NONVOLATILE MEMORY AND METHOD FOR ON-CHIP PSEUDO-RANDOMIZATION OF DATA WITHIN A PAGE AND BETWEEN PAGES
摘要 Features within an integrated-circuit memory chip enables scrambling or randomization of data stored in an array of nonvolatile memory cells. In one embodiment, randomization within each page helps to control source loading errors during sensing and floating gate to floating gate coupling among neighboring cells. Randomization from page to page helps to reduce program disturbs, user read disturbs, and floating gate to floating gate coupling that result from repeated and long term storage of specific data patterns. In another embodiment, randomization is implemented both within a page and between pages. The scrambling or randomization may be predetermined, or code generated pseudo randomization or user driven randomization in different embodiments. These features are accomplished within the limited resource and budget of the integrated-circuit memory chip.
申请公布号 WO2009035834(A2) 申请公布日期 2009.03.19
申请号 WO2008US73750 申请日期 2008.08.20
申请人 SANDISK CORPORATION;LI, YAN;FONG, YUPIN, KAWING;MOKHLESI, NIMA 发明人 LI, YAN;FONG, YUPIN, KAWING;MOKHLESI, NIMA
分类号 G11C7/10;G11C11/56;G11C16/10;G11C16/34 主分类号 G11C7/10
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