发明名称 LIGHT EMISSION DIODE AND MANUFACTURING METHOD FOR THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a light emission diode that is enhanced in current dispersion performance and light extraction efficiency.SOLUTION: A light emission diode contains a first conduction type semiconductor layer 23, plural mesas M which are arranged away from one another on the first conduction type semiconductor layer 23, each mesa M containing an active layer 25 and a second conduction type semiconductor layer 27, a reflection electrode 30 which is located on each of the plural mesas M and is in ohmic contact with the second conduction type semiconductor layer 27, and a current dispersion layer 33 which covers the plural mesas M and the first conduction type semiconductor layer 23, is electrically insulated from each mesa, contains each opening portion formed in the upper area of each mesa to expose the reflection electrode 30, and is in ohmic contact with the first conduction type semiconductor layer 23.SELECTED DRAWING: Figure 10
申请公布号 JP2016105495(A) 申请公布日期 2016.06.09
申请号 JP20160001347 申请日期 2016.01.06
申请人 SEOUL VIOSYS CO LTD 发明人 CHAE JONG HYEON;JANG JONG MIN;ROH WON YOUNG;SUH DAE WOONG;CHO DAE SUNG;LEE JOON SUP;LEE KYU HO;IN CHI HYUN
分类号 H01L33/10;H01L33/14 主分类号 H01L33/10
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