发明名称 Switching power supply device and a semiconductor integrated circuit
摘要 In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
申请公布号 US9369045(B2) 申请公布日期 2016.06.14
申请号 US201314084590 申请日期 2013.11.19
申请人 Renesas Electronics Corporation 发明人 Hosokawa Kyoichi;Kudo Ryotaro;Nagasawa Toshio;Tateno Koji
分类号 G05F1/40;H02M3/158;H02M7/538;H03F3/217;H03K17/06;H03K17/687;G05F1/44 主分类号 G05F1/40
代理机构 Shapiro, Gabor and Rosenberger, PLLC 代理人 Shapiro, Gabor and Rosenberger, PLLC
主权项 1. A regulator comprising: an inductor having a first end and a second end; an output capacitor coupled to the second end of the inductor; a boost capacitor; and a semiconductor device comprising: an input voltage terminal;an output terminal coupled to the first end of the inductor;a ground potential terminal;a power terminal;a first terminal coupled to the output terminal via the boost capacitor;a first MOSFET having a source-drain path coupled between the input voltage terminal and the output terminal and a gate;a second MOSFET having a source-drain path coupled between the output terminal and the ground potential terminal and a gate;a control circuit coupled to the power terminal, coupled to provide a first control signal to the gate of the first MOSFET and coupled to provide a second control signal to the gate of the second MOSFET; anda P-channel switch MOSFET having a source-drain path coupled between the power terminal and the first terminal, a source thereof being coupled to a back gate thereof and to the first terminal, and a drain thereof being coupled to the power terminal.
地址 Tokyo JP