发明名称 ALIGNMENT SUBSTRATE FOR FORMING EPITAXIAL FILM, AND PROCESS FOR PRODUCING SAME
摘要 The present invention relates to a textured substrate for epitaxial film formation, comprising a textured metal layer at least on one side, wherein the textured metal layer includes a copper layer having a cube texture and a nickel layer having a thickness of 100 to 20000 nm formed on the copper layer; the nickel layer has a nickel oxide layer formed on a surface thereof, having a thickness of 1 to 30 nm, and including a nickel oxide; and the nickel layer further includes a palladium-containing region formed of palladium-containing nickel at an interface with the nickel oxide layer. The top layer of the textured substrate, i.e. the nickel oxide layer, has a surface roughness of preferably 10 nm or less.
申请公布号 EP2829641(B1) 申请公布日期 2016.06.15
申请号 EP20130764121 申请日期 2013.03.21
申请人 TANAKA KIKINZOKU KOGYO KABUSHIKI KAISHA 发明人 KASHIMA, NAOJI;WATANABE, TOMONORI;NAGAYA, SHIGEO;SHIMA, KUNIHIRO;KUBOTA, SHUICHI
分类号 H01L39/24;B32B15/01;B32B15/04;C30B25/18 主分类号 H01L39/24
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