发明名称 |
ALIGNMENT SUBSTRATE FOR FORMING EPITAXIAL FILM, AND PROCESS FOR PRODUCING SAME |
摘要 |
The present invention relates to a textured substrate for epitaxial film formation, comprising a textured metal layer at least on one side, wherein the textured metal layer includes a copper layer having a cube texture and a nickel layer having a thickness of 100 to 20000 nm formed on the copper layer; the nickel layer has a nickel oxide layer formed on a surface thereof, having a thickness of 1 to 30 nm, and including a nickel oxide; and the nickel layer further includes a palladium-containing region formed of palladium-containing nickel at an interface with the nickel oxide layer. The top layer of the textured substrate, i.e. the nickel oxide layer, has a surface roughness of preferably 10 nm or less. |
申请公布号 |
EP2829641(B1) |
申请公布日期 |
2016.06.15 |
申请号 |
EP20130764121 |
申请日期 |
2013.03.21 |
申请人 |
TANAKA KIKINZOKU KOGYO KABUSHIKI KAISHA |
发明人 |
KASHIMA, NAOJI;WATANABE, TOMONORI;NAGAYA, SHIGEO;SHIMA, KUNIHIRO;KUBOTA, SHUICHI |
分类号 |
H01L39/24;B32B15/01;B32B15/04;C30B25/18 |
主分类号 |
H01L39/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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