A semiconductor device includes a semiconductor element, a support member bonded to a first surface of the semiconductor element with a first bonding material, and a lead electrode bonded to a second surface of the semiconductor element supported on the support member with a second bonding material. Respective connecting parts (12) of the support member and the lead electrode are Ni-plated (11) and each of the first and the second bonding material (2) is a Sn solder having a Cu 6 Sn 5 content greater than a eutectic content.
