发明名称 SURFACE PROCESSING METHOD AND MANUFACTURING METHOD OF STRUCTURE
摘要 PROBLEM TO BE SOLVED: To form a structure having high durability.SOLUTION: A manufacturing method of a structure, comprises the steps of: forming a modification part 230 by focusing a focal point 160 of a laser beam to an inner part of an Si wafer 200 and scanning the laser beam, and locally heating a part corresponding to the focal point 160 of laser beam of the Si wafer 200 (a laser beam irradiation step); forming an ion implantation layer 240 to the Si wafer 200 by performing ion implantation to the Si water 200 (an ion implantation step); and forming a projection structure 250 to a surface 210 of the Si wafer 200 by acting a blistering 241 on the modification part 230 by heating a whole of the Si wafer 200 and generating the blistering 241 based on the ion implantation layer 240 to the Si wafer 200 (a heating step).SELECTED DRAWING: Figure 2
申请公布号 JP2016119426(A) 申请公布日期 2016.06.30
申请号 JP20140259558 申请日期 2014.12.23
申请人 NAGOYA ELECTRICAL EDUCATIONAL FOUNDATION;HAMAMATSU PHOTONICS KK 发明人 IWATA HIROYUKI;KAWAGUCHI DAISUKE
分类号 H01L21/265;B23K26/00;B23K26/53;B81C1/00;H01L21/268 主分类号 H01L21/265
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