发明名称 |
SURFACE PROCESSING METHOD AND MANUFACTURING METHOD OF STRUCTURE |
摘要 |
PROBLEM TO BE SOLVED: To form a structure having high durability.SOLUTION: A manufacturing method of a structure, comprises the steps of: forming a modification part 230 by focusing a focal point 160 of a laser beam to an inner part of an Si wafer 200 and scanning the laser beam, and locally heating a part corresponding to the focal point 160 of laser beam of the Si wafer 200 (a laser beam irradiation step); forming an ion implantation layer 240 to the Si wafer 200 by performing ion implantation to the Si water 200 (an ion implantation step); and forming a projection structure 250 to a surface 210 of the Si wafer 200 by acting a blistering 241 on the modification part 230 by heating a whole of the Si wafer 200 and generating the blistering 241 based on the ion implantation layer 240 to the Si wafer 200 (a heating step).SELECTED DRAWING: Figure 2 |
申请公布号 |
JP2016119426(A) |
申请公布日期 |
2016.06.30 |
申请号 |
JP20140259558 |
申请日期 |
2014.12.23 |
申请人 |
NAGOYA ELECTRICAL EDUCATIONAL FOUNDATION;HAMAMATSU PHOTONICS KK |
发明人 |
IWATA HIROYUKI;KAWAGUCHI DAISUKE |
分类号 |
H01L21/265;B23K26/00;B23K26/53;B81C1/00;H01L21/268 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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