Non-volatile memory device and method for fabricating the same

摘要

A method for fabricating a non-volatile memory device includes: providing a substrate which includes a cell region where a plurality of memory cells are to be formed and a peripheral circuit region where a plurality of peripheral circuit devices are to be formed; forming the memory cells that are stacked perpendicularly to the substrate of the cell region; and forming a first conductive layer for forming a gate electrode of a selection transistor over the memory cells while forming the first conductive layer in the peripheral circuit region simultaneously, wherein the first conductive layer of the peripheral circuit region functions as a resistor body of at least one peripheral circuit device of the peripheral circuit devices.

主权项

1. A method of fabricating a non-volatile memory device comprising a substrate having a cell region and a peripheral circuit region, the method comprising:
forming first gate electrodes of a plurality of memory cells that are stacked over the cell region of the substrate so that the first gate electrodes are arranged along a vertical direction; and forming a second gate electrode of a selection transistor over the first gate electrodes and forming a resistor body over the peripheral circuit region of the substrate at the same time, wherein the second gate electrode and the resistor body include a same material layer.