发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING FUNCTION FOR DETECTING DEGRADATION OF SEMICONDUCTOR DEVICE AND METHOD OF DRIVING THE SAME
摘要 The present invention relates to a semiconductor integrated circuit device having the function of detecting the degradation of a semiconductor device and to a driving method thereof. The semiconductor integrated circuit device comprises: a PMOS transistor; an NMOS transistor connected to the PMOS transistor to configure an inverter; a first stress application part configured to be connected to the PMOS transistor and apply stress to the PMOS transistor; and a second stress application part configured to be connected to the NMOS transistor and apply stress to the NMOS transistor.
申请公布号 KR20160094159(A) 申请公布日期 2016.08.09
申请号 KR20150015408 申请日期 2015.01.30
申请人 SK HYNIX INC. 发明人 HWANG, JEONG TAE
分类号 G01R31/26;G01R31/28;G01R31/30 主分类号 G01R31/26
代理机构 代理人
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