NANOWIRE FIELD-EFFECT SENSOR INCLUDING NANOWIRES HAVING NETWORK STRUCTURE AND FABRICATION METHOD THEREOF

摘要

Disclosed herein is a technology for fabricating a nanowire field-effect sensor, in which a bulk silicon substrate is used so that the fabrication cost of the sensor can be reduced while the integration density of the sensor can be increased. In addition, the nanowire field-effect sensor includes a nano-network having a network structure in which pins are vertically arranged on the sidewalls of the network, respectively, and a gate insulating layer is applied to the pins. Due to this nano-network, the detection area of the sensor can be increased to increase its sensitivity, and the structural stability of the sensor can be ensured.

主权项

1. A nanowire field-effect sensor comprising nanowires having a network structure, the nanowire field-effect sensor comprising:
a source electrode region and drain electrode region formed on both sides of a bulk silicon substrate so as to be opposite to each other; a nano-network having a network structure and connected between the source electrode region and the drain electrode region; a bottom insulating layer formed between the bulk silicon substrate and the nano-network in such a manner that a bottom portion of each of the source electrode region and the drain electrode region is maintained connected to the bulk silicon substrate and a bottom portion of the nano-network is completely insulated from the bulk silicon substrate; and a detector material fixed to the nano-network so as to selectively react with a target material that is externally introduced.