发明名称 RESIST DEVELOPMENT DEVICE, RESIST DEVELOPMENT METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a resist development device capable of supplying a developer to a semiconductor wafer much more than a conventional resist development device without increasing the quantity of the developer to be sprayed.SOLUTION: The resist development device is configured to spray the developer towards a carrier 100 in which a plurality of semiconductor wafers W can be accommodated, while revolving the carrier 100. The resist development device comprises: a rotational body that can be rotated around an axis A of rotation; a cradle that can be revolved in a predetermined direction D of rotation while holding the carrier 100; and a plurality of inner spray nozzles 32 that spray the developer from the inside of a trajectory to the outside of the trajectory. The inner spray nozzle 32 includes a spray hole 33 that defines a spray range at one side (upper side of revolving movement) within a spray range of the developer obliquely to the axis A of rotation downwards in a direction of gravity closer to one side and upwards in the direction of gravity closer to the other side.SELECTED DRAWING: Figure 3
申请公布号 JP2016163037(A) 申请公布日期 2016.09.05
申请号 JP20150044087 申请日期 2015.03.05
申请人 SHINDENGEN ELECTRIC MFG CO LTD 发明人 WATABE MASAYA
分类号 H01L21/027;G03F7/38;H01L21/677 主分类号 H01L21/027
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