发明名称 Substrate for an organic electronic element and a production method therefor
摘要 The present invention relates to a substrate for an organic electronic element that enables surface resistance to be reduced and light-extraction efficiency improved, the substrate including: a base substrate; a scattering layer which is formed on the base substrate and includes an conductive pattern for reducing the surface resistance of an electrode, scattering particles for scattering light and a binder, and which forms an uneven structure in the surface opposite the base substrate; and a planarizing layer which is formed on the scattering layer and flattens the surface undulations caused by the uneven structure of the scattering layer, wherein the refractive index (Na) of the scattering particles and the refractive index (Nb) of the planarizing layer satisfy the relationship in formula 1 below. [Formula 1] |Na—Nb|≧0.3. In the formula as used herein, Na signifies the refractive index of the scattering particles and Nb signifies the refractive index of the planarizing layer.
申请公布号 US9448339(B2) 申请公布日期 2016.09.20
申请号 US201113878151 申请日期 2011.10.07
申请人 LG DISPLAY CO., LTD. 发明人 Jang Seong Su;Lee Yeon Keun;Moon Kyoung Sik;Kang Min Soo
分类号 G02B5/02;H01L51/52;C23C30/00 主分类号 G02B5/02
代理机构 Dentons US LLP 代理人 Dentons US LLP
主权项 1. A substrate for an organic electronic element comprising: a base substrate; a scattering layer including a binder and scattering particles and having an uneven structure of the scattering particles configured to scatter light, and disposed on the base substrate; a conductive pattern disposed on the base substrate and connected to an electrode to lower a sheet resistance of the electrode; and a planarizing layer comprising a binder resin and formed on the scattering layer and planarizing the uneven structure of the scattering particles, wherein an upper portion of the conductive pattern is adjacent to the planarizing layer and wherein a top surface of an exposed conductive pattern and a top surface of the planarizing layer are in the same plane, and a ratio of an area of the exposed conductive pattern on the top surface of the planarizing layer with respect to a total area of the exposed conductive pattern and the planarizing layer is from 0.001% to 50%, wherein the conductive pattern comprises Mo/Al/Mo, wherein the binder in the scattering layer and the binder in the planarizing layer comprise an inorganic or organic-inorganic composite based on a siloxane bond, wherein a refractive index of the scattering particles is in a range of 2.2 to 3.0, wherein a refractive index of the planarizing layer is in a range of 1.8 to 2.0, wherein the refractive index (Na) of the scattering particles and the refractive index (Nb) of the planarizing layer satisfy the relationship in formula 1 below: |Na—Nb|≧0.3, wherein the uneven structure of the scattering particles is disposed at an interface between the scattering layer and the planarizing layer.
地址 Seoul KR