发明名称 |
Determining a state of a high aspect ratio hole using measurement results from an electrostatic measurement device |
摘要 |
A system, method and a non-transitory compute readable medium for evaluating a high aspect ratio (HAR) hole having a nanometric scale width and formed in a substrate, including obtaining, during an illumination period, multiple measurement results by an electrostatic measurement device that comprises a probe tip that is placed in proximity to the HAR hole; wherein multiple locations within the HAR hole are illuminated with a beam of charged particles during the illumination period; and processing the multiple measurement results to determine a state of the HAR hole. |
申请公布号 |
US9448253(B2) |
申请公布日期 |
2016.09.20 |
申请号 |
US201514719193 |
申请日期 |
2015.05.21 |
申请人 |
APPLIED MATERIALS ISRAEL LTD. |
发明人 |
Chirko Konstantin;Litman Alon |
分类号 |
H01J37/00;G01Q60/30;G01Q30/02;H01J37/28 |
主分类号 |
H01J37/00 |
代理机构 |
Kilpatrick Townsend & Stockton LLP |
代理人 |
Kilpatrick Townsend & Stockton LLP |
主权项 |
1. A method for evaluating a high aspect ratio (HAR) hole having a nanometric scale width and formed in a substrate, the method comprises:
obtaining, during an illumination period, multiple measurement results by an electrostatic measurement device that comprises a probe tip that is placed in proximity to the HAR hole; wherein multiple locations within the HAR hole are illuminated with a beam of charged particles during the illumination period; and processing, by a processor, the multiple measurement results to determine a state of the HAR hole based upon calculating a change of a potential offset over time. |
地址 |
Rehovot IL |