发明名称 ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF, DISPLAY DEVICE, THIN-FILM TRANSISTOR (TFT) AND MANUFACTURING METHOD THEREOF
摘要 An array substrate, a manufacturing method thereof, a display device, a thin-film transistor (TFT) and a manufacturing method thereof are disclosed. The method for manufacturing the TFT comprises: forming a pattern of an active layer and a gate insulating layer provided with a metal film on a base substrate patterning the metal film by one patterning process, and forming patterns of a gate electrode, a source electrode, a drain electrode, a gate line and a data line; forming a passivation layer on the base substrate; patterning the passivation layer by one patterning process, and forming a source contact hole, a drain contact hole and a bridge structure contact hole; and forming a transparent conductive film on the base substrate, and removing partial transparent conductive film to form a source contact portion, a drain contact portion, a pixel electrode and a bridge structure.
申请公布号 US2016300866(A1) 申请公布日期 2016.10.13
申请号 US201414436563 申请日期 2014.09.20
申请人 BOE TECHNOLOGY GROUP CO., LTD. 发明人 LONG Chunping;IM Jang Soon;LIU Chien Hung
分类号 H01L27/12;G02F1/1362;G02F1/1343;H01L27/32;G02F1/1368 主分类号 H01L27/12
代理机构 代理人
主权项 1. A method for manufacturing an array substrate, comprising: forming a pattern of an active layer and a gate insulating layer on a base substrate; forming a metal film on the gate insulating layer, patterning the metal film by one patterning process, and forming patterns of a gate electrode, a source electrode, a drain electrode, a gate line and a data line, in which the gate line or the data line is disconnected at an intersection of the gate line and the data line; forming a passivation layer on the base substrate; patterning the passivation layer by one patterning process, and forming a source contact hole through which the source electrode and the active layers are partially exposed, a drain contact hole through which the drain electrodes and the active layers are partially exposed, and bridge structure contact holes through which the disconnected gate line or data line is partially exposed; and forming a transparent conductive film on the base substrate, removing partially the transparent conductive film to form a source contact portion electrically connected with the source electrode and the active layer in the source contact hole and a drain contact portion electrically connected with the drain electrode and the active layer in the drain contact hole, forming a pixel electrode electrically connected with the drain contact portion on the passivation layer on the drain electrode, and forming a bridge structure electrically connected with the disconnected gate line or data line in the bridge structure contact holes and on the passivation layer above.
地址 Beijing CN