Method for producing an optoelectronic semiconductor device, and optoelectronic semiconductor device

摘要

A method for producing an optoelectronic thin-film chip semiconductor device is specified. A conductor structure is applied on a carrier and a multiplicity of optoelectronic semiconductor chips are arranged between the conductor structures. Each of the optoelectronic semiconductor chips includes a layer at a top side. Furthermore, electrical connections between semiconductor chip and the conductor structure are established, for instance using a bonding wire. The semiconductor chips and the conductor structure are surrounded with a molded body. The molded body does not project beyond the optoelectronic semiconductor chips at the top side thereof facing away from the carrier. Moreover, the carrier is removed and the semiconductor chips surrounded by molding are singulated.

主权项

1. An optoelectronic semiconductor component comprising:
an optoelectronic semiconductor chip that comprises a layer on an upper side; a conductor structure that comprises an electrically conductive material and has an opening in which the optoelectronic semiconductor chip is arranged; a contact wire that electrically connects a terminal point of the optoelectronic semiconductor chip to the conductor structure; a molded body, wherein lateral surfaces of the optoelectronic semiconductor chip and the contact wire are at least partially covered by the molded body and wherein the optoelectronic semiconductor chip extends beyond the molded body; and a reflective envelope molded around the optoelectronic semiconductor chip in a region extending beyond the molded body, wherein the reflective envelope does not extend beyond the optoelectronic semiconductor chip on its upper side, wherein a lower side of the optoelectronic semiconductor chip is freely accessible.