Method of forming vias in silicon carbide and resulting devices and circuits

摘要

A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device including a Group III-V semiconductor layer on a surface on a silicon carbide substrate, wherein the semiconductor device defines at least one via through the silicon carbide substrate and the epitaxial layer.

主权项

1. A semiconductor device comprising:
a silicon carbide substrate having a first surface and a polished second surface that is opposite the first surface, wherein the polished second surface renders the silicon carbide substrate substantially transparent; a semiconductor layer on said first surface of said silicon carbide substrate, wherein the semiconductor device defines at least one via through said silicon carbide substrate and said semiconductor layer; and at least one contact on the semiconductor layer opposite the silicon carbide substrate, wherein the at least one contact is coated with a noble metal.