发明名称 Chemical deposition apparatus having conductance control
摘要 A chemical deposition apparatus having conductance control, which includes a showerhead module having a faceplate and a backing plate, the showerhead module including a plurality of inlets which deliver reactor chemistries to a cavity and exhaust outlets which remove reactor chemistries, a pedestal module configured to support a substrate and which moves vertically to close the cavity between the pedestal module and an outer portion of the faceplate, and at least one conductance control assembly, which is in fluid communication with the cavity via the exhaust outlets. The at least one conductance control assembly selected from one or more of the following: a ball valve assembly, a fluidic valve, magnetically coupled rotary plates, and/or a linear based magnetic system.
申请公布号 US9490149(B2) 申请公布日期 2016.11.08
申请号 US201313934594 申请日期 2013.07.03
申请人 LAM RESEARCH CORPORATION 发明人 Chandrasekharan Ramesh;Leeser Karl;Xia Chunguang;Tucker Jeremy
分类号 H01L21/67;H01L21/02;C23C16/44;C23C16/455;C23C16/52 主分类号 H01L21/67
代理机构 Buchanan Ingersoll & Rooney PC 代理人 Buchanan Ingersoll & Rooney PC
主权项 1. A chemical deposition apparatus, comprising: a chemical isolation chamber; a deposition chamber formed within the chemical isolation chamber; a showerhead module having a faceplate and a backing plate, the faceplate including a plurality of inlets which deliver reactor chemistries to a cavity and exhaust outlets radially outward of the inlets which remove reactor chemistries from the cavity; and at least one conductance control assembly, which is in fluid communication with the cavity via the exhaust outlets and an evacuation apparatus fluidly connected to the at least one conductance control assembly by one or more evacuation vacuum lines, the at least one conductance control assembly comprising a fluidic valve free of moving parts, the fluidic valve having a modulating gas portion and a chamber outflow portion in fluid communication with the one or more evacuation vacuum lines, the modulating gas portion configured to direct a stream of modulating gas from a modulating gas supply into a flow of reactor chemistries from the cavity, and wherein the stream of modulating gas modulates flow resistance experienced by the flow of the reactor chemistries from the cavity by directing the stream of the modulating gas into the flow of reactor chemistries from the cavity.
地址 Fremont CA US