Trench to trench fin short mitigation

摘要

A semiconductor structure includes a replacement strap for a finFET fin that provides communication between a storage capacitor and the fin. The storage capacitor is located in a deep trench formed in a substrate and the fin is formed on a surface of the substrate. The replacement strap allows for electrical connection of the fin to the storage capacitor and is in direct physical communication with the fin and the storage capacitor. The replacement strap may be formed by removing a sacrificial strap and merging epitaxially grown material from the fin and epitaxially grown material from the capacitor. The epitaxially grown material grown from the fin grows at a slower rate relative to the epitaxially grown material grown from the capacitor. By removing the sacrificial strap prior to forming the replacement strap, epitaxial overgrowth that may cause shorts between adjacent capacitors is limited.

主权项

1. A semiconductor device fabrication process comprising:
forming a fin layer upon a semiconductor substrate; forming a deep trench within the fin layer and within the substrate; forming a capacitor within the deep trench; forming sacrificial strap material upon the capacitor within the deep trench; forming a fin by removing portions of the fin layer; forming a sacrificial strap by removing portions of the sacrificial strap material, the sacrificial strap contacting the fin and contacting the capacitor; removing the sacrificial strap, and; forming a replacement strap by merging material epitaxially grown from the fins and from the capacitor.