| 发明名称 | Semiconductor device | ||
| 摘要 | The present invention relates to a semiconductor device (1) for use in at least an optical application comprising: at least an optically passive aspect (2) that is operable in substantially an optically passive mode, and at least an optically active material (3) comprising at least a material that is operable in substantially an optically active mode, wherein: the optically passive aspect (2) further comprises at least a crystalline seed layer (4), the optically active material (3) being epitaxially grown in at least a predefined structure (5) provided in the optically passive aspect (2) that extends to at least an upper surface (4′) of the crystalline seed layer (4), and the optically passive aspect (2) is structured to comprise at least a passive photonic structure (6), wherein the crystalline seed layer (4) comprises a crystalline wafer and wherein the optically active material (3) comprises at least one of: a III-V material and a II-VI material. | ||
| 申请公布号 | US9513436(B2) | 申请公布日期 | 2016.12.06 |
| 申请号 | US201314439942 | 申请日期 | 2013.10.31 |
| 申请人 | International Business Machines Corporation | 发明人 | Czornomaz Lukas;Hofrichter Jens;Richter Mirja;Riel Heike |
| 分类号 | G02B6/12;G02B6/43;H01L31/0232;H01S5/026;G02B6/13;H01S5/00;G02B6/42;G02B6/122;H01S5/10;H01S5/183 | 主分类号 | G02B6/12 |
| 代理机构 | Scully, Scott, Murphy & Presser, P.C. | 代理人 | Scully, Scott, Murphy & Presser, P.C. ;Quinn, Esq. David M. |
| 主权项 | 1. A semiconductor device (1) for use in at least an optical application comprising: at least an optically passive aspect (2) that is operable in substantially an optically passive mode, and at least an optically active material (3) comprising at least a material that is operable in substantially an optically active mode, wherein: the optically passive aspect (2) further comprises at least a crystalline seed layer (4), the optically active material (3) being epitaxially grown in at least a predefined structure (5) provided in the optically passive aspect (2) that extends into the crystalline seed layer (4) to at least an upper surface (4′) of the crystalline seed layer (4), and the optically passive aspect (2) is structured to comprise at least a passive photonic structure (6), wherein the crystalline seed layer (4) comprises a crystalline wafer and wherein the optically active material (3) comprises at least one of: a III-V material and a II-VI material. | ||
| 地址 | Armonk NY US | ||