发明名称 |
Process and apparatus to reduce declared capacity of a storage device by trimming |
摘要 |
Systems, methods, and/or devices are used to reduce declared capacity of non-volatile memory of a storage device in a storage system. In one aspect, the method includes, detecting an amelioration trigger for reducing declared capacity of non-volatile memory of the storage device of the storage system, and in accordance with the detected amelioration trigger, performing an amelioration process to reduce declared capacity of the non-volatile memory of the storage device, the performing including: trimming, in accordance with a trim command received from a host, at least a portion of a set of logical addresses in a logical address space; and reducing declared capacity of the non-volatile memory of the storage device. In some embodiments, the storage device includes one or more flash memory devices. In some embodiments, the method is performed by the storage device. |
申请公布号 |
US9524112(B2) |
申请公布日期 |
2016.12.20 |
申请号 |
US201514621090 |
申请日期 |
2015.02.12 |
申请人 |
SANDISK TECHNOLOGIES LLC |
发明人 |
Samuels Allen;Kruger Warren Fritz;Truong Linh Tien |
分类号 |
G06F12/02;G06F3/06 |
主分类号 |
G06F12/02 |
代理机构 |
Morgan, Lewis & Bockius LLP |
代理人 |
Morgan, Lewis & Bockius LLP |
主权项 |
1. A method of managing a storage system, the method comprising:
at a storage device of the storage system:
detecting an amelioration trigger for reducing declared capacity of non-volatile memory of the storage device of the storage system, wherein declared capacity is storage capacity available to a host;in accordance with the detected amelioration trigger, performing an amelioration process to reduce declared capacity of the non-volatile memory of the storage device, the performing including:
trimming, in accordance with a trim command received from the host, at least a portion of a set of logical addresses in a logical address space; andreducing declared capacity of the non-volatile memory of the storage device;prior to detecting the amelioration trigger, detecting a first wear condition of the non-volatile memory of the storage device, wherein a total storage capacity of the non-volatile memory of the storage device includes declared capacity and over-provisioning; andin response to detecting the first wear condition, performing a remedial action that reduces over-provisioning of the non-volatile memory of the storage device without reducing declared capacity of the non-volatile memory of the storage device. |
地址 |
Plano TX US |