发明名称 Process and apparatus to reduce declared capacity of a storage device by trimming
摘要 Systems, methods, and/or devices are used to reduce declared capacity of non-volatile memory of a storage device in a storage system. In one aspect, the method includes, detecting an amelioration trigger for reducing declared capacity of non-volatile memory of the storage device of the storage system, and in accordance with the detected amelioration trigger, performing an amelioration process to reduce declared capacity of the non-volatile memory of the storage device, the performing including: trimming, in accordance with a trim command received from a host, at least a portion of a set of logical addresses in a logical address space; and reducing declared capacity of the non-volatile memory of the storage device. In some embodiments, the storage device includes one or more flash memory devices. In some embodiments, the method is performed by the storage device.
申请公布号 US9524112(B2) 申请公布日期 2016.12.20
申请号 US201514621090 申请日期 2015.02.12
申请人 SANDISK TECHNOLOGIES LLC 发明人 Samuels Allen;Kruger Warren Fritz;Truong Linh Tien
分类号 G06F12/02;G06F3/06 主分类号 G06F12/02
代理机构 Morgan, Lewis & Bockius LLP 代理人 Morgan, Lewis & Bockius LLP
主权项 1. A method of managing a storage system, the method comprising: at a storage device of the storage system: detecting an amelioration trigger for reducing declared capacity of non-volatile memory of the storage device of the storage system, wherein declared capacity is storage capacity available to a host;in accordance with the detected amelioration trigger, performing an amelioration process to reduce declared capacity of the non-volatile memory of the storage device, the performing including: trimming, in accordance with a trim command received from the host, at least a portion of a set of logical addresses in a logical address space; andreducing declared capacity of the non-volatile memory of the storage device;prior to detecting the amelioration trigger, detecting a first wear condition of the non-volatile memory of the storage device, wherein a total storage capacity of the non-volatile memory of the storage device includes declared capacity and over-provisioning; andin response to detecting the first wear condition, performing a remedial action that reduces over-provisioning of the non-volatile memory of the storage device without reducing declared capacity of the non-volatile memory of the storage device.
地址 Plano TX US