发明名称 Formation of transparent conductive zinc oxide thin film on substrate - by CVD of an organo-zinc cpd. and boron- or aluminium cpd.
摘要 Mfg. a transparent conductive ZnO thin film on a substrate by means of chemical vaporisation comprises: (1) feeding pure water and an organometallic Zn-contg. material, separately and entrained by a carrier gas, into a vacuum chamber (1) with a reduced internal pressure; (2) adjusting the gas pressure in the chamber to 1-30 torr; and (3) feeding gaseous diborane or a cpd. contg. B or Al into the vacuum chamber and heating a substrate (2) disposed in the chamber to a predetermined temp., resulting in the formation of the thin film on the substrate under the cited gas pressure. USE/ADVANTAGE - The ZnO film is used as a transparent electrode and as a non-reflecting layer for solar cells made of amorphous Si or CuInSe2. The film can be formed at a low. temp., and its surface structure can be altered by changing the film-forming conditions. The latter is partic. important if light-scattering is to be prevented in a solar cell.
申请公布号 DE4207783(A1) 申请公布日期 1992.09.17
申请号 DE19924207783 申请日期 1992.03.11
申请人 YOSHIDA KOGYO K.K.;KONAGAI, MAKOTO, TOKIO/TOKYO, JP 发明人 YAMADA, AKIRA, TOKIO/TOKYO, JP;YOSHIDA, SHINICHIRO;YOSHINO, MASAHIRO, KUROBE, TOYAMA, JP;TAKAHASHI, KIYOSHI, TOKIO/TOKYO, JP;OMURA, AKIRA, KUROBE, TOYAMA, JP;KONAGAI, MAKOTO, TOKIO/TOKYO, JP
分类号 C23C16/40;C23C16/46;C23C16/48;H01B5/14;H01B13/00 主分类号 C23C16/40
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