Method of fabricating semiconductor substrate having very shallow impurity diffusion layer,申请号US19910812483-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	Method of fabricating semiconductor substrate having very shallow impurity diffusion layer
摘要
申请公布号	US5270250(A)	申请公布日期	1993.12.14
申请号	US19910812483	申请日期	1991.12.23
申请人	M. SETEK CO., LTD.	发明人	MURAI, TSUYOSHI;NAKAMURA, SHIGEAKI;KONAKA, TOSHINORI;MIZUNO, SHIGERU
分类号	H01L21/265;H01L21/00;H01L21/223;H01L21/26;(IPC1-7):H01C21/265	主分类号	H01L21/265
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Tape recording system and head device

Top cover attached single plate fluid dynamic bearing motor

Liquid crystal display cell, display cell, glass substrate for display device and manufacturing method for liquid crystal display cell

Camera module with focus adjustment structure and systems and methods of making the same

Ink container and ink container holder

Printing method, control method, printing apparatus, control apparatus, and computer-readable storage medium

Integrated multiplexer/de-multiplexer for active-matrix display/imaging arrays

Graphic engine for fill style transferring in a resource-constrained device

Loop antenna for a mobile terminal capable of reducing specific absorption rate

High gain planar compact loop antenna with high radiation resistance

Method and apparatus for correction of quantization-induced beacon beam errors

Boost clock generation circuit and semiconductor device

Wafer test method

Two wire hall device output detection circuit

SIGNAL GENERATION USING DAC HAVING SELECTIVELY SWITCHED REGISTERS STORING OUTPUT VALUES

Active load clamp for a track-and-hold circuit

Claw-pole type stepping motor having radial dimension reduced without detriment to performance characteristic

Method and apparatus for a vehicle braking system

ARMREST ADJUSTMENT MECHANISM