发明名称 |
Image sensor and method of manufacturing same |
摘要 |
An image sensor includes a photodiode formed in substrate, an insulating interlayer structure formed on the substrate, a metal structure formed in the insulating interlayer structure, a dummy pattern formed on the insulating interlayer structure, and a light-shielding layer pattern enclosing the dummy pattern. The dummy pattern is at least partially overlapped by the metal structure and the light-shielding layer pattern is at least partially overlapped by the photodiode.
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申请公布号 |
US7205623(B2) |
申请公布日期 |
2007.04.17 |
申请号 |
US20050229764 |
申请日期 |
2005.09.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HONG JONG-WOOK;SHIN JONG-CHEOL |
分类号 |
H01L31/0232;H01L27/14;H04N5/335;H04N5/361;H04N5/369;H04N5/372;H04N5/374 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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