发明名称 Image sensor and method of manufacturing same
摘要 An image sensor includes a photodiode formed in substrate, an insulating interlayer structure formed on the substrate, a metal structure formed in the insulating interlayer structure, a dummy pattern formed on the insulating interlayer structure, and a light-shielding layer pattern enclosing the dummy pattern. The dummy pattern is at least partially overlapped by the metal structure and the light-shielding layer pattern is at least partially overlapped by the photodiode.
申请公布号 US7205623(B2) 申请公布日期 2007.04.17
申请号 US20050229764 申请日期 2005.09.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HONG JONG-WOOK;SHIN JONG-CHEOL
分类号 H01L31/0232;H01L27/14;H04N5/335;H04N5/361;H04N5/369;H04N5/372;H04N5/374 主分类号 H01L31/0232
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