发明名称 PLASMA DENSITY AND ETCH RATE ENHANCING SEMICONDUCTOR PROCESSING CHAMBER
摘要 <p>A lid assembly for a narrow-gap magnetically enhanced reactive ion etch (MERIE) chamber. The lid assembly has a lid and a liner. Both pieces are substantially U-shaped and interfit such that the interface between them extends outside the chamber. A blocker plate is situated in a recess between a lower surface of the lid and an upper surface of the liner. The blocker plate is concave in shape so that a downward bow of the lid does not exert a stress on the blocker plate. The novel lid assembly is more leak resistant, requires less cleaning time and is cheaper than a design that utilizes a moving pedestal.</p>
申请公布号 WO2000010192(A1) 申请公布日期 2000.02.24
申请号 US1999018049 申请日期 1999.08.09
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