发明名称 COMPOSITION FOR RESIST LOWER FILM
摘要 PROBLEM TO BE SOLVED: To obtain a composition for a film under a resist disposed between the resist and an antireflection film, having both adhesion to the resist and resistance to a resist developing solution and also having resistance to oxygen ashing in the removal of the resist. SOLUTION: The composition contains (A) a hydrolyzate and/or a condensation product of at least one compound selected from the group comprising compounds of the formula R1aSi(OR2)4-a [where R1 is H, F or a monovalent organic group, R2 is a monovalent organic group and (a) is an integer of 0-2] and the formula R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c [where R3-R6 may be the same or different and are each a monovalent organic group, (b) and (c) may be the same or different and are each a number of 0-2, R7 is O or -(CH2)n-, (d) is 0 or 1 and (n) is a number of 1-6] and (B) a compound which generates an acid when irradiated with UV and/or heated.
申请公布号 JP2000356854(A) 申请公布日期 2000.12.26
申请号 JP19990163215 申请日期 1999.06.10
申请人 JSR CORP 发明人 SUGITA HIKARI;SAITO AKIO;YAMADA KINJI;NISHIKAWA MICHINORI;OTA YOSHIHISA;ISAMOTO YOSHITSUGU
分类号 H01L21/027;C08K5/54;C08L83/04;C08L83/14;G03F7/075;G03F7/09;G03F7/11 主分类号 H01L21/027
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